STP100N10F7

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STP100N10F7 datasheet

• Маркировка
  STP100N10F7
• Производитель
  STMicroelectronics
• Описание
  STMicroelectronics STP100N10F7 Configuration: Single Continuous Drain Current: 80 A Drain-source Breakdown Voltage: 100 V Fall Time: 16 ns Gate Charge Qg: 56 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220-3 Power Dissipation: 150 W Resistance Drain-source Rds (on): 0.0068 Ohms Rise Time: 40 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 46 ns RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 0.0068 Ohms Typical Turn-Off Delay Time: 46 ns
• Количество страниц
  21 шт.
• Форматы файла
  HTML, PDF

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Файл формата Pdf 2,80 MB